Synthesis of novel room temperature chiral ionic liquids. application as reaction media for the heck arylation of aza-endocyclic acrylates.

New achiral and chiral RTILs were prepared using novel and/or optimized synthetic routes. These new series of imidazolinium, imidazolium, pyridinium and nicotine-derived ionic liquids were fully characterized including differential scanning calorimetry (DSC) analysis. The performance of these achiral and chiral room temperature ionic liquids (RTILs) was demonstrated by means of the Heck arylation of endocyclic acrylates employing arenediazonium salts and aryl iodides. The Heck arylations performed in the presence of these ionic entities, either as a solvent or as an additive, were effective leading to complete conversion of the substrate and good to excellent yield of the Heck adduct. In spite of the good performances, no asymmetric induction was observed in any of the cases studied. Two new diastereoisomeric NHC-palladium complexes were prepared in good yields from a chiral imidazolium salt and their structure characterized by X-ray diffraction. Overall, the Heck arylations employing arenediazonium tetrafluoroborates in RTILs were more effective than the traditional protocols employing aryl iodides in terms of reactivity and yields

Detection and imaging of the oxygen deficiency in single crystalline YBa2_{\text{2}}Cu3_{\text{3}}O7−δ_{\text{7}-\delta} thin films using a positron beam

Single crystalline YBa$_{\text{2}}$Cu$_{\text{3}}$O$_{\text{7}-\delta}$ (YBCO) thin films were grown by pulsed laser deposition (PLD) in order to probe the oxygen deficiency $\delta$ using a mono-energetic positron beam. The sample set covered a large range of $\delta$ (0.191<$\delta$<0.791) yielding a variation of the critical temperature $T_{\text{c}}$ between 25 and 90\,K. We found a linear correlation between the Doppler broadening of the positron electron annihilation line and $\delta$ determined by X-ray diffraction (XRD). Both, the origin of the found correlation and the influence of metallic vacancies, were examined with the aid of ab-initio calculations that allowed us (i) to exclude the presence of Y vacancies and (ii) to ensure that positrons still probe $\delta$ despite the potential presence of Ba or Cu vacancies. In addition, by scanning with the positron beam the spatial variation of $\delta$ could be analyzed. It was found to fluctuate with a standard deviation of up to $0.079(5)$ within a single YBCO film

Optimization of a Cl₂–H₂ inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures

Inductively coupled plasmaetching using Cl₂–H₂ chemistry with no additive gas (CH₄, Ar, or N₂) is studied to realize deep (>5μm) ridges with smooth and vertical sidewalls. The process is optimized for nonthermalized InP wafers to avoid the use of thermal grease. Cleaning of the rear side of the wafer after etching is avoided, which is suitable for an industrial process or for critical subsequent steps such as epitaxial regrowth. The influence of the Cl₂∕H₂ ratio on the etching mechanism is investigated for both InP bulk layers and InGaAs∕InP or InGaAlAs∕InPheterostructures. The authors show that this ratio is the main parameter controlling the ridge profile, in a similar way for both bulk InP and InGa(Al)As∕InP samples. Smooth and vertical sidewalls with neither undercuts nor notches can be obtained in the 0.5–1mTpressure range for a hydrogen percentage of 35%–45% in the gas mixture. Etching rates from 900to1300nm∕min together with a selectivity over SiNx dielectric mask as high as 24:1–29:1 are measured for the InP bulk layers under these conditions. Etching does not affect the optical quality of the heterostructures as evidenced from micro-photoluminescence measurements performed on 1.6‐to0.85‐μm-wide deep etched ridge waveguides. The process is well adapted to the realization of low loss deep ridge waveguides or buried heterostructures

Back-side-on-BOX heterogeneously integrated III-V-on-silicon O-band discrete-mode lasers

We demonstrate foundry-fabricated O-band III-V-on-silicon discrete-mode lasers. The laser fabrication follows the back-side-on-buried-oxide laser integration process and is compatible with complex, multilayer, silicon-on-insulator based platforms. A series of devices were characterized, with the best devices producing on-chip powers of nearly 20 mW with Lorentzian linewidths below 20 kHz and a side mode suppression ratio of at least 60 dB

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz

Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler

We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.7 mu m, reducing the power consumption of the device. The silicon waveguide thickness is 400 nm, compatible with high-performance modulator designs and allowing efficient coupling to a standard 220-nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 800 nm. These new features lead to good laser performance: a lasing threshold as low as 30 mA and an output power of more than 4 mW at room temperature in continuous-wave operation regime. Continuous wave lasing up to 70 degrees C is obtained

Electric-field-induced pyroelectric order and localization of the confined electrons in LaAlO3/SrTiO3 heterostructures

With infrared ellipsometry, x-ray diffraction, and electric transport measurements we investigated the electric-field-effect on the confined electrons at the LaAlO3/SrTiO3 interface. We obtained evidence that the localization of the electrons at low temperature and negative gate voltage is induced, or at least strongly enhanced, by a pyroelectric phase transition in SrTiO3 which strongly reduces the lattice polarizability and the subsequent Coulomb screening. In particular, we show that the charge localisation and the polar order of SrTiO3 both develop below about 50 K and exhibit similar, unipolar hysteresis loops as a function of the gate voltage. Our findings suggest that the pyroelectric order also plays an important role in the quantum phase transition at very low temperatures where superconductivity is suppressed by an electric field.Comment: 5 pages, 4 figures, supplementary materia

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO3_3-SrTiO3_3 Interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C

A Soluble Version of Nipah Virus Glycoprotein G Delivered by Vaccinia Virus MVA Activates Specific CD8 and CD4 T Cells in Mice

Nipah virus (NiV) is an emerging zoonotic virus that is transmitted by bats to humans and to pigs, causing severe respiratory disease and often fatal encephalitis. Antibodies directed against the NiV-glycoprotein (G) protein are known to play a major role in clearing NiV infection and in providing vaccine-induced protective immunity. More recently, T cells have been also shown to be involved in recovery from NiV infection. So far, relatively little is known about the role of T cell responses and the antigenic targets of NiV-G that are recognized by CD8 T cells. In this study, NiV-G protein served as the target immunogen to activate NiV-specific cellular immune responses. Modified Vaccinia virus Ankara (MVA), a safety-tested strain of vaccinia virus for preclinical and clinical vaccine research, was used for the generation of MVA-NiV-G candidate vaccines expressing different versions of recombinant NiV-G. Overlapping peptides covering the entire NiV-G protein were used to identify major histocompatibility complex class I/II-restricted T cell responses in type I interferon receptor-deficient (IFNAR-/-) mice after vaccination with the MVA-NiV-G candidate vaccines. We have identified an H2-b-restricted nonamer peptide epitope with CD8 T cell antigenicity and a H2-b 15mer with CD4 T cell antigenicity in the NiV-G protein. The identification of this epitope and the availability of the MVA-NiV-G candidate vaccines will help to evaluate NiV-G-specific immune responses and the potential immune correlates of vaccine-mediated protection in the appropriate murine models of NiV-G infection. Of note, a soluble version of NiV-G was advantageous in activating NiV-G-specific cellular immune responses using these peptides